Resistive switching characteristics of carbon nitride supported manganese oxysulfide: an evidence for the sweep dependent transformation of polarity

As part of a program to investigate the materials for resistive random access memory (ReRam) applications, a study has been conducted using embedded manganese oxysulfide (MOS) nanoparticles on the thin film of carbon nitride (CN). A high-temperature in-situ route was employed to synthesis CN-MOS com...

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Detalles Bibliográficos
Autores principales: Perla, Venkata K., Ghosh, Sarit K., Mallick, Kaushik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7459303/
https://www.ncbi.nlm.nih.gov/pubmed/32868806
http://dx.doi.org/10.1038/s41598-020-71313-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7459303/
https://www.ncbi.nlm.nih.gov/pubmed/32868806
http://dx.doi.org/10.1038/s41598-020-71313-2

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