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Resistive switching characteristics of carbon nitride supported manganese oxysulfide: an evidence for the sweep dependent transformation of polarity
As part of a program to investigate the materials for resistive random access memory (ReRam) applications, a study has been conducted using embedded manganese oxysulfide (MOS) nanoparticles on the thin film of carbon nitride (CN). A high-temperature in-situ route was employed to synthesis CN-MOS com...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7459303/ https://www.ncbi.nlm.nih.gov/pubmed/32868806 http://dx.doi.org/10.1038/s41598-020-71313-2 |