Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor

Assuming that the 0.6-μm silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-channel and p-channel), pn-junction diode (with p-body doping and without doping...

Descripción completa

Detalles Bibliográficos
Autores principales: Elamaran, Durgadevi, Suzuki, Yuya, Satoh, Hiroaki, Banerjee, Amit, Hiromoto, Norihisa, Inokawa, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7464105/
https://www.ncbi.nlm.nih.gov/pubmed/32722127
http://dx.doi.org/10.3390/mi11080718

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7464105/
https://www.ncbi.nlm.nih.gov/pubmed/32722127
http://dx.doi.org/10.3390/mi11080718

Ejemplares similares