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Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor

Assuming that the 0.6-μm silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-channel and p-channel), pn-junction diode (with p-body doping and without doping...

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Detalles Bibliográficos
Autores principales:	Elamaran, Durgadevi, Suzuki, Yuya, Satoh, Hiroaki, Banerjee, Amit, Hiromoto, Norihisa, Inokawa, Hiroshi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7464105/ https://www.ncbi.nlm.nih.gov/pubmed/32722127 http://dx.doi.org/10.3390/mi11080718

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