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The Mechanism of Layer Stacked Clamping (LSC) for Polishing Ultra-Thin Sapphire Wafer
Double-sides polishing technology has the advantages of high flatness and parallelism, and high polishing efficiency. It is the preferred polishing method for the preparation of ultra-thin sapphire wafer. However, the clamping method is a fundamental problem which is currently difficult to solve. In...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7464148/ https://www.ncbi.nlm.nih.gov/pubmed/32781686 http://dx.doi.org/10.3390/mi11080759 |
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author | Chen, Zhixiang Cao, Linlin Yuan, Julong Lyu, Binghai Hang, Wei Wang, Jiahuan |
author_facet | Chen, Zhixiang Cao, Linlin Yuan, Julong Lyu, Binghai Hang, Wei Wang, Jiahuan |
author_sort | Chen, Zhixiang |
collection | PubMed |
description | Double-sides polishing technology has the advantages of high flatness and parallelism, and high polishing efficiency. It is the preferred polishing method for the preparation of ultra-thin sapphire wafer. However, the clamping method is a fundamental problem which is currently difficult to solve. In this paper, a layer stacked clamping (LSC) method of ultra-thin sapphire wafer which was used on double-sides processing was proposed and the clamping mechanism of layer stacked clamping (LSC) was studied. Based on the rough surface contact model of fractal theory, combining the theory of van der Waals force and capillary force, the adhesion model of the rough surfaces was constructed, and the reliability of the model was verified through experiments. Research has found that after displacement between the two surfaces the main force of the adhesion force is capillary force. The capillary force decreases with the increasing of surface roughness, droplet volume, and contact angle. For an ultra-thin sapphire wafer with a diameter of 50.8 mm and a thickness of 0.17 mm, more than 1.4 N of normal adhesion force can be generated through the LSC method. Through the double-sides polishing experiment using the LSC method, an ultra-thin sapphire wafer with an average surface roughness (R(a)) of 1.52 nm and a flatness (PV) of 0.968 μm was obtained. |
format | Online Article Text |
id | pubmed-7464148 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-74641482020-09-04 The Mechanism of Layer Stacked Clamping (LSC) for Polishing Ultra-Thin Sapphire Wafer Chen, Zhixiang Cao, Linlin Yuan, Julong Lyu, Binghai Hang, Wei Wang, Jiahuan Micromachines (Basel) Article Double-sides polishing technology has the advantages of high flatness and parallelism, and high polishing efficiency. It is the preferred polishing method for the preparation of ultra-thin sapphire wafer. However, the clamping method is a fundamental problem which is currently difficult to solve. In this paper, a layer stacked clamping (LSC) method of ultra-thin sapphire wafer which was used on double-sides processing was proposed and the clamping mechanism of layer stacked clamping (LSC) was studied. Based on the rough surface contact model of fractal theory, combining the theory of van der Waals force and capillary force, the adhesion model of the rough surfaces was constructed, and the reliability of the model was verified through experiments. Research has found that after displacement between the two surfaces the main force of the adhesion force is capillary force. The capillary force decreases with the increasing of surface roughness, droplet volume, and contact angle. For an ultra-thin sapphire wafer with a diameter of 50.8 mm and a thickness of 0.17 mm, more than 1.4 N of normal adhesion force can be generated through the LSC method. Through the double-sides polishing experiment using the LSC method, an ultra-thin sapphire wafer with an average surface roughness (R(a)) of 1.52 nm and a flatness (PV) of 0.968 μm was obtained. MDPI 2020-08-06 /pmc/articles/PMC7464148/ /pubmed/32781686 http://dx.doi.org/10.3390/mi11080759 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Chen, Zhixiang Cao, Linlin Yuan, Julong Lyu, Binghai Hang, Wei Wang, Jiahuan The Mechanism of Layer Stacked Clamping (LSC) for Polishing Ultra-Thin Sapphire Wafer |
title | The Mechanism of Layer Stacked Clamping (LSC) for Polishing Ultra-Thin Sapphire Wafer |
title_full | The Mechanism of Layer Stacked Clamping (LSC) for Polishing Ultra-Thin Sapphire Wafer |
title_fullStr | The Mechanism of Layer Stacked Clamping (LSC) for Polishing Ultra-Thin Sapphire Wafer |
title_full_unstemmed | The Mechanism of Layer Stacked Clamping (LSC) for Polishing Ultra-Thin Sapphire Wafer |
title_short | The Mechanism of Layer Stacked Clamping (LSC) for Polishing Ultra-Thin Sapphire Wafer |
title_sort | mechanism of layer stacked clamping (lsc) for polishing ultra-thin sapphire wafer |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7464148/ https://www.ncbi.nlm.nih.gov/pubmed/32781686 http://dx.doi.org/10.3390/mi11080759 |
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