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Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation. Depending on the gate voltage, the three variations occur in transfer curves....

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Detalles Bibliográficos
Autores principales: Kim, Jang Hyun, Kim, Hyun Woo, Song, Young Suh, Kim, Sangwan, Kim, Garam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7464523/
https://www.ncbi.nlm.nih.gov/pubmed/32824238
http://dx.doi.org/10.3390/mi11080780