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Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor
In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation. Depending on the gate voltage, the three variations occur in transfer curves....
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7464523/ https://www.ncbi.nlm.nih.gov/pubmed/32824238 http://dx.doi.org/10.3390/mi11080780 |