Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to over...

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Detalles Bibliográficos
Autores principales: Celano, Umberto, Gomez, Andres, Piedimonte, Paola, Neumayer, Sabine, Collins, Liam, Popovici, Mihaela, Florent, Karine, McMitchell, Sean R. C., Favia, Paola, Drijbooms, Chris, Bender, Hugo, Paredis, Kristof, Di Piazza, Luca, Jesse, Stephen, Van Houdt, Jan, van der Heide, Paul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466465/
https://www.ncbi.nlm.nih.gov/pubmed/32796703
http://dx.doi.org/10.3390/nano10081576

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466465/
https://www.ncbi.nlm.nih.gov/pubmed/32796703
http://dx.doi.org/10.3390/nano10081576

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