Pseudo-Interface Switching of a Two-Terminal TaO(x)/HfO(2) Synaptic Device for Neuromorphic Applications

Memristor-type synaptic devices that can effectively emulate synaptic plasticity open up new directions for neuromorphic hardware systems. Here, a double high-k oxide structured memristor device (TaO(x)/HfO(2)) was fabricated, and its synaptic applications were characterized. Device deposition was c...

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Detalles Bibliográficos
Autores principales: Ryu, Hojeong, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466475/
https://www.ncbi.nlm.nih.gov/pubmed/32784590
http://dx.doi.org/10.3390/nano10081550

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466475/
https://www.ncbi.nlm.nih.gov/pubmed/32784590
http://dx.doi.org/10.3390/nano10081550

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