Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen

We used graphene oxide (GO) and egg albumen (EA) to fabricate bipolar resistance switching devices with indium tin oxide (ITO)/GO/EA/GO/Aluminum (Al) and ITO/EA/Al structures. The experimental results show that these ITO/GO/EA/GO/Al and ITO/EA/Al bio-memristors exhibit rewritable flash memory charac...

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Detalles Bibliográficos
Autores principales: Wang, Lu, Wang, Jinyi, Wen, Dianzhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466537/
https://www.ncbi.nlm.nih.gov/pubmed/32751364
http://dx.doi.org/10.3390/nano10081491

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466537/
https://www.ncbi.nlm.nih.gov/pubmed/32751364
http://dx.doi.org/10.3390/nano10081491

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