High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithographic technology. The broad consensus on t...

Descripción completa

Detalles Bibliográficos
Autores principales: Manouras, Theodore, Argitis, Panagiotis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466712/
https://www.ncbi.nlm.nih.gov/pubmed/32823865
http://dx.doi.org/10.3390/nano10081593

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466712/
https://www.ncbi.nlm.nih.gov/pubmed/32823865
http://dx.doi.org/10.3390/nano10081593

Ejemplares similares