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High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results
The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithographic technology. The broad consensus on t...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7466712/ https://www.ncbi.nlm.nih.gov/pubmed/32823865 http://dx.doi.org/10.3390/nano10081593 |