Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation

[Image: see text] As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump—THz probe measurement...

Descripción completa

Detalles Bibliográficos
Autores principales: Zou, Xianshao, Li, Chuanshuai, Su, Xiaojun, Liu, Yuchen, Finkelstein-Shapiro, Daniel, Zhang, Wei, Yartsev, Arkady
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7467545/
https://www.ncbi.nlm.nih.gov/pubmed/32469493
http://dx.doi.org/10.1021/acsami.0c04892

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7467545/
https://www.ncbi.nlm.nih.gov/pubmed/32469493
http://dx.doi.org/10.1021/acsami.0c04892

Ejemplares similares