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Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation
[Image: see text] As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump—THz probe measurement...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7467545/ https://www.ncbi.nlm.nih.gov/pubmed/32469493 http://dx.doi.org/10.1021/acsami.0c04892 |