Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

Gallium nitride (GaN) was epitaxially grown on nitrogen doped single layer graphene (N-SLG) substrates using chemical vapour deposition (CVD) technique. The results obtained using x-ray diffractometer (XRD) revealed the hexagonal crystal structure of GaN. Photoluminescence (PL) spectroscopy, energy...

Descripción completa

Detalles Bibliográficos
Autores principales: Sankaranarayanan, Sanjay, Kandasamy, Prabakaran, Raju, Ramesh, Krishnan, Baskar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7468238/
https://www.ncbi.nlm.nih.gov/pubmed/32879355
http://dx.doi.org/10.1038/s41598-020-71514-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7468238/
https://www.ncbi.nlm.nih.gov/pubmed/32879355
http://dx.doi.org/10.1038/s41598-020-71514-9

Ejemplares similares