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Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors
Gallium nitride (GaN) was epitaxially grown on nitrogen doped single layer graphene (N-SLG) substrates using chemical vapour deposition (CVD) technique. The results obtained using x-ray diffractometer (XRD) revealed the hexagonal crystal structure of GaN. Photoluminescence (PL) spectroscopy, energy...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7468238/ https://www.ncbi.nlm.nih.gov/pubmed/32879355 http://dx.doi.org/10.1038/s41598-020-71514-9 |