Robust In-Zn-O Thin-Film Transistors with a Bilayer Heterostructure Design and a Low-Temperature Fabrication Process Using Vacuum and Solution Deposited Layers

[Image: see text] We report on the design, fabrication, and characterization of heterostructure In-Zn-O (IZO) thin-film transistors (TFTs) with improved performance characteristics and robust operation. The heterostructure layer is fabricated by stacking a solution-processed IZO film on top of a buf...

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Detalles Bibliográficos
Autores principales: Bang, Sang Yun, Mocanu, Felix C., Lee, Tae Hoon, Yang, Jiajie, Zhan, Shijie, Jung, Sung-Min, Shin, Dong-Wook, Suh, Yo-Han, Fan, Xiang-Bing, Lee, Sanghyo, Choi, Hyung Woo, Occhipinti, Luigi G., Han, Soo Deok, Kim, Jong Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7469374/
https://www.ncbi.nlm.nih.gov/pubmed/32905305
http://dx.doi.org/10.1021/acsomega.0c02225

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7469374/
https://www.ncbi.nlm.nih.gov/pubmed/32905305
http://dx.doi.org/10.1021/acsomega.0c02225

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