Ultrafast spatiotemporal photocarrier dynamics near GaN surfaces studied by terahertz emission spectroscopy

Gallium nitride (GaN) is a promising wide-bandgap semiconductor, and new characterization tools are needed to study its local crystallinity, carrier dynamics, and doping effects. Terahertz (THz) emission spectroscopy (TES) is an emerging experimental technique that can probe the ultrafast carrier dy...

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Detalles Bibliográficos
Autores principales: Yamahara, Kota, Mannan, Abdul, Kawayama, Iwao, Nakanishi, Hidetoshi, Tonouchi, Masayoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7471959/
https://www.ncbi.nlm.nih.gov/pubmed/32884079
http://dx.doi.org/10.1038/s41598-020-71728-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7471959/
https://www.ncbi.nlm.nih.gov/pubmed/32884079
http://dx.doi.org/10.1038/s41598-020-71728-x

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