High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response

Group III–V semiconductors with direct band gaps have become crucial for optoelectronic and microelectronic applications. Exploring these materials for spintronic applications is an important direction for many research groups. In this study, pure and cobalt doped GaN nanowires were grown on the Si...

Descripción completa

Detalles Bibliográficos
Autores principales: Maraj, Mudassar, Nabi, Ghulam, Usman, Khurram, Wang, Engui, Wei, Wenwang, Wang, Yukun, Sun, Wenhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475854/
https://www.ncbi.nlm.nih.gov/pubmed/32796564
http://dx.doi.org/10.3390/ma13163537

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475854/
https://www.ncbi.nlm.nih.gov/pubmed/32796564
http://dx.doi.org/10.3390/ma13163537

Ejemplares similares