Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations

Understanding the properties of defects is crucial to design higher performance semiconductor materials because they influence the electronic and optical properties significantly. Using ab initio calculations, the dynamics properties of nitrogen interstitial in GaN material, including the configurat...

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Detalles Bibliográficos
Autores principales: He, Huan, Liu, Wenbo, Zhang, Pengbo, Liao, Wenlong, Tong, Dayin, Yang, Lin, He, Chaohui, Zang, Hang, Zong, Hongxiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475889/
https://www.ncbi.nlm.nih.gov/pubmed/32824409
http://dx.doi.org/10.3390/ma13163627

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475889/
https://www.ncbi.nlm.nih.gov/pubmed/32824409
http://dx.doi.org/10.3390/ma13163627

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