Low-Temperature In-Induced Holes Formation in Native-SiO(x)/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiO(x) layer on Si(111) substrate via In-indu...

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Detalles Bibliográficos
Autores principales: R. Reznik, Rodion, P. Kotlyar, Konstantin, O. Gridchin, Vladislav, V. Ubyivovk, Evgeniy, V. Federov, Vladimir, I. Khrebtov, Artem, S. Shevchuk, Dmitrii, E. Cirlin, George
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475965/
https://www.ncbi.nlm.nih.gov/pubmed/32764363
http://dx.doi.org/10.3390/ma13163449

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475965/
https://www.ncbi.nlm.nih.gov/pubmed/32764363
http://dx.doi.org/10.3390/ma13163449

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