Low-Temperature In-Induced Holes Formation in Native-SiO(x)/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiO(x) layer on Si(111) substrate via In-indu...

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Autores principales: R. Reznik, Rodion, P. Kotlyar, Konstantin, O. Gridchin, Vladislav, V. Ubyivovk, Evgeniy, V. Federov, Vladimir, I. Khrebtov, Artem, S. Shevchuk, Dmitrii, E. Cirlin, George
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475965/
https://www.ncbi.nlm.nih.gov/pubmed/32764363
http://dx.doi.org/10.3390/ma13163449
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author R. Reznik, Rodion
P. Kotlyar, Konstantin
O. Gridchin, Vladislav
V. Ubyivovk, Evgeniy
V. Federov, Vladimir
I. Khrebtov, Artem
S. Shevchuk, Dmitrii
E. Cirlin, George
author_facet R. Reznik, Rodion
P. Kotlyar, Konstantin
O. Gridchin, Vladislav
V. Ubyivovk, Evgeniy
V. Federov, Vladimir
I. Khrebtov, Artem
S. Shevchuk, Dmitrii
E. Cirlin, George
author_sort R. Reznik, Rodion
collection PubMed
description The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiO(x) layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires.
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spelling pubmed-74759652020-09-09 Low-Temperature In-Induced Holes Formation in Native-SiO(x)/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires R. Reznik, Rodion P. Kotlyar, Konstantin O. Gridchin, Vladislav V. Ubyivovk, Evgeniy V. Federov, Vladimir I. Khrebtov, Artem S. Shevchuk, Dmitrii E. Cirlin, George Materials (Basel) Article The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiO(x) layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires. MDPI 2020-08-05 /pmc/articles/PMC7475965/ /pubmed/32764363 http://dx.doi.org/10.3390/ma13163449 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
R. Reznik, Rodion
P. Kotlyar, Konstantin
O. Gridchin, Vladislav
V. Ubyivovk, Evgeniy
V. Federov, Vladimir
I. Khrebtov, Artem
S. Shevchuk, Dmitrii
E. Cirlin, George
Low-Temperature In-Induced Holes Formation in Native-SiO(x)/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires
title Low-Temperature In-Induced Holes Formation in Native-SiO(x)/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires
title_full Low-Temperature In-Induced Holes Formation in Native-SiO(x)/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires
title_fullStr Low-Temperature In-Induced Holes Formation in Native-SiO(x)/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires
title_full_unstemmed Low-Temperature In-Induced Holes Formation in Native-SiO(x)/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires
title_short Low-Temperature In-Induced Holes Formation in Native-SiO(x)/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires
title_sort low-temperature in-induced holes formation in native-sio(x)/si(111) substrates for self-catalyzed mbe growth of gaas nanowires
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475965/
https://www.ncbi.nlm.nih.gov/pubmed/32764363
http://dx.doi.org/10.3390/ma13163449
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