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Low-Temperature In-Induced Holes Formation in Native-SiO(x)/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires
The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiO(x) layer on Si(111) substrate via In-indu...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475965/ https://www.ncbi.nlm.nih.gov/pubmed/32764363 http://dx.doi.org/10.3390/ma13163449 |