Structural Property Study for GeSn Thin Films

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmissi...

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Detalles Bibliográficos
Autores principales: Zhang, Liyao, Song, Yuxin, von den Driesch, Nils, Zhang, Zhenpu, Buca, Dan, Grützmacher, Detlev, Wang, Shumin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7476050/
https://www.ncbi.nlm.nih.gov/pubmed/32824570
http://dx.doi.org/10.3390/ma13163645

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7476050/
https://www.ncbi.nlm.nih.gov/pubmed/32824570
http://dx.doi.org/10.3390/ma13163645

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