High-performance extended-gate ion-sensitive field-effect transistors with multi-gate structure for transparent, flexible, and wearable biosensors

In this study, we developed a high-performance extended-gate ion-sensitive field-effect transistor (EG-ISFET) sensor on a flexible polyethylene naphthalate (PEN) substrate. The EG-ISFET sensor comprises a tin dioxide (SnO(2)) extended gate, which acts as a detector, and an amorphous indium-gallium-z...

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Detalles Bibliográficos
Autores principales: Jeon, Jin-Hyeok, Cho, Won-Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2020
Materias:
Bio-Inspired and Biomedical Materials
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7476522/
https://www.ncbi.nlm.nih.gov/pubmed/32939162
http://dx.doi.org/10.1080/14686996.2020.1775477

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7476522/
https://www.ncbi.nlm.nih.gov/pubmed/32939162
http://dx.doi.org/10.1080/14686996.2020.1775477

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