Strain-enhanced high Q-factor GaN micro-electromechanical resonator

We report on a highly sensitive gallium nitride (GaN) micro-electromechanical (MEMS) resonator with a record quality factor (Q) exceeding 10(5) at the high resonant frequency (f) of 911 kHz by the strain engineering for the GaN-on-Si structure. The f of the double-clamped GaN beam bridge is increase...

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Detalles Bibliográficos
Autores principales: Sang, Liwen, Liao, Meiyong, Yang, Xuelin, Sun, Huanying, Zhang, Jie, Sumiya, Masatomo, Shen, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2020
Materias:
Optical, Magnetic and Electronic Device Materials
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7476523/
https://www.ncbi.nlm.nih.gov/pubmed/32939176
http://dx.doi.org/10.1080/14686996.2020.1792257

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7476523/
https://www.ncbi.nlm.nih.gov/pubmed/32939176
http://dx.doi.org/10.1080/14686996.2020.1792257

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