Cargando…
Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS(2) field-effect transistors
Helium ion irradiation is a known method of tuning the electrical conductivity and charge carrier mobility of novel two-dimensional semiconductors. Here, we report a systematic study of the electrical performance of chemically synthesized monolayer molybdenum disulfide (MoS(2)) field-effect transist...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2020
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7476591/ https://www.ncbi.nlm.nih.gov/pubmed/32953377 http://dx.doi.org/10.3762/bjnano.11.117 |