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Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS(2) field-effect transistors

Helium ion irradiation is a known method of tuning the electrical conductivity and charge carrier mobility of novel two-dimensional semiconductors. Here, we report a systematic study of the electrical performance of chemically synthesized monolayer molybdenum disulfide (MoS(2)) field-effect transist...

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Detalles Bibliográficos
Autores principales:	Jadwiszczak, Jakub, Maguire, Pierce, Cullen, Conor P, Duesberg, Georg S, Zhang, Hongzhou
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2020
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7476591/ https://www.ncbi.nlm.nih.gov/pubmed/32953377 http://dx.doi.org/10.3762/bjnano.11.117

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