Two-dimensional BN buffer for plasma enhanced atomic layer deposition of Al(2)O(3) gate dielectrics on graphene field effect transistors

Here, we investigate the use of few-layer metal organic chemical vapor deposition (MOCVD) grown BN as a two-dimensional buffer layer for plasma enhanced atomic layer deposition (PE-ALD) of Al(2)O(3) on graphene for top gated field effect transistors (FETs). The reactive nature of PE-ALD enables depo...

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Detalles Bibliográficos
Autores principales: Snure, Michael, Vangala, Shivashankar R., Prusnick, Timothy, Grzybowski, Gordon, Crespo, Antonio, Leedy, Kevin D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7477096/
https://www.ncbi.nlm.nih.gov/pubmed/32895395
http://dx.doi.org/10.1038/s41598-020-71108-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7477096/
https://www.ncbi.nlm.nih.gov/pubmed/32895395
http://dx.doi.org/10.1038/s41598-020-71108-5

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