Self-defect-passivation by Br-enrichment in FA-doped Cs(1−x)FA(x)PbBr(3) quantum dots: towards high-performance quantum dot light-emitting diodes

Halide vacancy defect is one of the major origins of non-radiative recombination in the lead halide perovskite light emitting devices (LEDs). Hence the defect passivation is highly demanded for the high-performance perovskite LEDs. Here, we demonstrated that FA doping led to the enrichment of Br in...

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Detalles Bibliográficos
Autores principales: Park, Young Ran, Eom, Sangwon, Kim, Hong Hee, Choi, Won Kook, Kang, Youngjong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7479606/
https://www.ncbi.nlm.nih.gov/pubmed/32901051
http://dx.doi.org/10.1038/s41598-020-71666-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7479606/
https://www.ncbi.nlm.nih.gov/pubmed/32901051
http://dx.doi.org/10.1038/s41598-020-71666-8

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