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Self-defect-passivation by Br-enrichment in FA-doped Cs(1−x)FA(x)PbBr(3) quantum dots: towards high-performance quantum dot light-emitting diodes
Halide vacancy defect is one of the major origins of non-radiative recombination in the lead halide perovskite light emitting devices (LEDs). Hence the defect passivation is highly demanded for the high-performance perovskite LEDs. Here, we demonstrated that FA doping led to the enrichment of Br in...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7479606/ https://www.ncbi.nlm.nih.gov/pubmed/32901051 http://dx.doi.org/10.1038/s41598-020-71666-8 |