Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices

[Image: see text] An attempt has been made to understand the thermodynamic mechanism study of the low-pressure chemical vapor deposition (LPCVD) process during single-layer graphene (SLG) growth as it is the most debatable part of the CVD process. The intensive studies are being carried out worldwid...

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Detalles Bibliográficos
Autores principales: Sharma, Indu, Papanai, Girija Shankar, Paul, Sharon Jyotika, Gupta, Bipin Kumar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7482075/
https://www.ncbi.nlm.nih.gov/pubmed/32923769
http://dx.doi.org/10.1021/acsomega.0c02132

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7482075/
https://www.ncbi.nlm.nih.gov/pubmed/32923769
http://dx.doi.org/10.1021/acsomega.0c02132

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