Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices

[Image: see text] An attempt has been made to understand the thermodynamic mechanism study of the low-pressure chemical vapor deposition (LPCVD) process during single-layer graphene (SLG) growth as it is the most debatable part of the CVD process. The intensive studies are being carried out worldwide to enhance the quality of LPCVD-grown graphene up to the level of mechanically exfoliated SLG. The mechanism and processes have been discussed earlier by several research groups during the variation in different parameters. However, the optimization and mechanism involvement due to individual partial pressure-based effects has not been elaborately discussed so far. Hence, we have addressed this issue in detail including thermodynamics of the growth process and tried to establish the effect of the partial pressures of individual gases during the growth of SLG. Also, optical microscopy, Raman spectroscopy, and atomic force microscopy (AFM) have been performed to determine the quality of SLG. Furthermore, nucleation density has also been estimated to understand a plausible mechanism of graphene growth based on partial pressure. Moreover, the field-effect transistor (FET) device has been fabricated to determine the electrical properties of SLG, and the estimated mobility has been found as ∼2595 cm(2) V(–1) s(–1) at n = −2 × 10(12) cm(–2). Hence, the obtained results trigger that the partial pressure is an important parameter for the growth of SLG and having various potential applications in high-performance graphene FET (GFET) devices.