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Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices
[Image: see text] An attempt has been made to understand the thermodynamic mechanism study of the low-pressure chemical vapor deposition (LPCVD) process during single-layer graphene (SLG) growth as it is the most debatable part of the CVD process. The intensive studies are being carried out worldwid...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7482075/ https://www.ncbi.nlm.nih.gov/pubmed/32923769 http://dx.doi.org/10.1021/acsomega.0c02132 |