The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements

Scanning Spreading Resistance Microscopy is a well-established technique for obtaining quantitative two- and three-dimensional carrier profiles in semiconductor devices with sub-nm spatial resolution. However, for sub-100 nm devices, the use of focused ion beam becomes inevitable for exposing the re...

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Detalles Bibliográficos
Autores principales: Pandey, Komal, Paredis, Kristof, Hantschel, Thomas, Drijbooms, Chris, Vandervorst, Wilfried
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7483413/
https://www.ncbi.nlm.nih.gov/pubmed/32913186
http://dx.doi.org/10.1038/s41598-020-71826-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7483413/
https://www.ncbi.nlm.nih.gov/pubmed/32913186
http://dx.doi.org/10.1038/s41598-020-71826-w

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