Robust formation of amorphous Sb(2)S(3) on functionalized graphene for high-performance optoelectronic devices in the cyan-gap

Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb(2)S(3) films with a bandgap of 2.8 eV. By exp...

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Detalles Bibliográficos
Autores principales: Chen, Ju-Hung, Chiu, Sheng-Kuei, Luo, Jin-De, Huang, Shu-Yu, Ting, Hsiang-An, Hofmann, Mario, Hsieh, Ya-Ping, Ting, Chu-Chi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7483733/
https://www.ncbi.nlm.nih.gov/pubmed/32913187
http://dx.doi.org/10.1038/s41598-020-70879-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7483733/
https://www.ncbi.nlm.nih.gov/pubmed/32913187
http://dx.doi.org/10.1038/s41598-020-70879-1

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