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Robust formation of amorphous Sb(2)S(3) on functionalized graphene for high-performance optoelectronic devices in the cyan-gap
Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb(2)S(3) films with a bandgap of 2.8 eV. By exp...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7483733/ https://www.ncbi.nlm.nih.gov/pubmed/32913187 http://dx.doi.org/10.1038/s41598-020-70879-1 |