Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al(0.33)Ga(0.67)As

The effects of an epitaxial layer on the rectifying behavior of n-GaAs/Ti/Au/Si:Al(0.33)Ga(0.67) As diodes have been examined through the inhomogeneity model on n(+)-GaAs substrate with orientation. The electrical properties and conduction mechanism of these materials were understood through theoret...

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Detalles Bibliográficos
Autor principal: Al-Ahmadi, Noorah Ahmed
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2020
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7502344/
https://www.ncbi.nlm.nih.gov/pubmed/32995595
http://dx.doi.org/10.1016/j.heliyon.2020.e04852

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7502344/
https://www.ncbi.nlm.nih.gov/pubmed/32995595
http://dx.doi.org/10.1016/j.heliyon.2020.e04852

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