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Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al(0.33)Ga(0.67)As
The effects of an epitaxial layer on the rectifying behavior of n-GaAs/Ti/Au/Si:Al(0.33)Ga(0.67) As diodes have been examined through the inhomogeneity model on n(+)-GaAs substrate with orientation. The electrical properties and conduction mechanism of these materials were understood through theoret...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Elsevier
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7502344/ https://www.ncbi.nlm.nih.gov/pubmed/32995595 http://dx.doi.org/10.1016/j.heliyon.2020.e04852 |