Van der Waals Epitaxy of III-Nitrides and Its Applications

III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdW...

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Detalles Bibliográficos
Autores principales: Chen, Qi, Yin, Yue, Ren, Fang, Liang, Meng, Yi, Xiaoyan, Liu, Zhiqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7503271/
https://www.ncbi.nlm.nih.gov/pubmed/32878046
http://dx.doi.org/10.3390/ma13173835

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7503271/
https://www.ncbi.nlm.nih.gov/pubmed/32878046
http://dx.doi.org/10.3390/ma13173835

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