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Van der Waals Epitaxy of III-Nitrides and Its Applications

III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdW...

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Autores principales: Chen, Qi, Yin, Yue, Ren, Fang, Liang, Meng, Yi, Xiaoyan, Liu, Zhiqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7503271/
https://www.ncbi.nlm.nih.gov/pubmed/32878046
http://dx.doi.org/10.3390/ma13173835
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author Chen, Qi
Yin, Yue
Ren, Fang
Liang, Meng
Yi, Xiaoyan
Liu, Zhiqiang
author_facet Chen, Qi
Yin, Yue
Ren, Fang
Liang, Meng
Yi, Xiaoyan
Liu, Zhiqiang
author_sort Chen, Qi
collection PubMed
description III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdWE) has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the nitride epilayers and the substrates. By using vdWE, the stress in the epilayer can be sufficiently relaxed, and the epilayer can be easily exfoliated and transferred, which provides opportunities for novel device design and fabrication. In this paper, we review and discuss the important progress on the researches of nitrides vdWE. The potential applications of nitride vdWE are also prospected.
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spelling pubmed-75032712020-09-23 Van der Waals Epitaxy of III-Nitrides and Its Applications Chen, Qi Yin, Yue Ren, Fang Liang, Meng Yi, Xiaoyan Liu, Zhiqiang Materials (Basel) Review III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdWE) has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the nitride epilayers and the substrates. By using vdWE, the stress in the epilayer can be sufficiently relaxed, and the epilayer can be easily exfoliated and transferred, which provides opportunities for novel device design and fabrication. In this paper, we review and discuss the important progress on the researches of nitrides vdWE. The potential applications of nitride vdWE are also prospected. MDPI 2020-08-31 /pmc/articles/PMC7503271/ /pubmed/32878046 http://dx.doi.org/10.3390/ma13173835 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Chen, Qi
Yin, Yue
Ren, Fang
Liang, Meng
Yi, Xiaoyan
Liu, Zhiqiang
Van der Waals Epitaxy of III-Nitrides and Its Applications
title Van der Waals Epitaxy of III-Nitrides and Its Applications
title_full Van der Waals Epitaxy of III-Nitrides and Its Applications
title_fullStr Van der Waals Epitaxy of III-Nitrides and Its Applications
title_full_unstemmed Van der Waals Epitaxy of III-Nitrides and Its Applications
title_short Van der Waals Epitaxy of III-Nitrides and Its Applications
title_sort van der waals epitaxy of iii-nitrides and its applications
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7503271/
https://www.ncbi.nlm.nih.gov/pubmed/32878046
http://dx.doi.org/10.3390/ma13173835
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