Intermediate-phase-assisted low-temperature formation of γ-CsPbI(3) films for high-efficiency deep-red light-emitting devices

Black phase CsPbI(3) is attractive for optoelectronic devices, while usually it has a high formation energy and requires an annealing temperature of above 300 °C. The formation energy can be significantly reduced by adding HI in the precursor. However, the resulting films are not suitable for light-...

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Detalles Bibliográficos
Autores principales: Yi, Chang, Liu, Chao, Wen, Kaichuan, Liu, Xiao-Ke, Zhang, Hao, Yu, Yong, Fan, Ning, Ji, Fuxiang, Kuang, Chaoyang, Ma, Bo, Tu, Cailing, Zhang, Ya, Xue, Chen, Li, Renzhi, Gao, Feng, Huang, Wei, Wang, Jianpu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7505955/
https://www.ncbi.nlm.nih.gov/pubmed/32958808
http://dx.doi.org/10.1038/s41467-020-18380-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7505955/
https://www.ncbi.nlm.nih.gov/pubmed/32958808
http://dx.doi.org/10.1038/s41467-020-18380-1

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