Formation of quantum dots in GaN/AlGaN FETs

GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion...

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Detalles Bibliográficos
Autores principales: Otsuka, Tomohiro, Abe, Takaya, Kitada, Takahito, Ito, Norikazu, Tanaka, Taketoshi, Nakahara, Ken
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7508848/
https://www.ncbi.nlm.nih.gov/pubmed/32963267
http://dx.doi.org/10.1038/s41598-020-72269-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7508848/
https://www.ncbi.nlm.nih.gov/pubmed/32963267
http://dx.doi.org/10.1038/s41598-020-72269-z

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