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Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations

Instabilities of electron plasma waves in high-mobility semiconductor devices have recently attracted a lot of attention as a possible candidate for closing the THz gap. Conventional moments-based transport models usually neglect time derivatives in the constitutive equations for vectorial quantitie...

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Detalles Bibliográficos
Autores principales: Linn, Tobias, Bittner, Kai, Brachtendorf, Hans Georg, Jungemann, Christoph
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7510938/
https://www.ncbi.nlm.nih.gov/pubmed/33029040
http://dx.doi.org/10.1007/s10915-020-01311-z