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Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges

III-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga, Al)N-based photonic and electronic devices. The bandgaps and bandgap bowing parameters of III-nitrides across the full composition range are reviewed with a special emphasis on In(x)Al(1−x)N, where less...

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Detalles Bibliográficos
Autores principales: Alam, Shahab N., Zubialevich, Vitaly Z., Ghafary, Bijan, Parbrook, Peter J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7530746/
https://www.ncbi.nlm.nih.gov/pubmed/33004917
http://dx.doi.org/10.1038/s41598-020-73160-7