Picosecond multilevel resistive switching in tantalum oxide thin films

The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive switch repositing the information in form of different resis...

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Detalles Bibliográficos
Autores principales: Böttger, Ulrich, von Witzleben, Moritz, Havel, Viktor, Fleck, Karsten, Rana, Vikas, Waser, Rainer, Menzel, Stephan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7532197/
https://www.ncbi.nlm.nih.gov/pubmed/33009437
http://dx.doi.org/10.1038/s41598-020-73254-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7532197/
https://www.ncbi.nlm.nih.gov/pubmed/33009437
http://dx.doi.org/10.1038/s41598-020-73254-2

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