A wideband cryogenic microwave low-noise amplifier

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds...

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Detalles Bibliográficos
Autores principales: Ivanov, Boris I, Volkhin, Dmitri I, Novikov, Ilya L, Pitsun, Dmitri K, Moskalev, Dmitri O, Rodionov, Ilya A, Il’ichev, Evgeni, Vostretsov, Aleksey G
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2020
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7537378/
https://www.ncbi.nlm.nih.gov/pubmed/33083196
http://dx.doi.org/10.3762/bjnano.11.131

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7537378/
https://www.ncbi.nlm.nih.gov/pubmed/33083196
http://dx.doi.org/10.3762/bjnano.11.131

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