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A wideband cryogenic microwave low-noise amplifier

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds...

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Autores principales: Ivanov, Boris I, Volkhin, Dmitri I, Novikov, Ilya L, Pitsun, Dmitri K, Moskalev, Dmitri O, Rodionov, Ilya A, Il’ichev, Evgeni, Vostretsov, Aleksey G
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7537378/
https://www.ncbi.nlm.nih.gov/pubmed/33083196
http://dx.doi.org/10.3762/bjnano.11.131
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author Ivanov, Boris I
Volkhin, Dmitri I
Novikov, Ilya L
Pitsun, Dmitri K
Moskalev, Dmitri O
Rodionov, Ilya A
Il’ichev, Evgeni
Vostretsov, Aleksey G
author_facet Ivanov, Boris I
Volkhin, Dmitri I
Novikov, Ilya L
Pitsun, Dmitri K
Moskalev, Dmitri O
Rodionov, Ilya A
Il’ichev, Evgeni
Vostretsov, Aleksey G
author_sort Ivanov, Boris I
collection PubMed
description A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.
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spelling pubmed-75373782020-10-19 A wideband cryogenic microwave low-noise amplifier Ivanov, Boris I Volkhin, Dmitri I Novikov, Ilya L Pitsun, Dmitri K Moskalev, Dmitri O Rodionov, Ilya A Il’ichev, Evgeni Vostretsov, Aleksey G Beilstein J Nanotechnol Full Research Paper A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator. Beilstein-Institut 2020-09-30 /pmc/articles/PMC7537378/ /pubmed/33083196 http://dx.doi.org/10.3762/bjnano.11.131 Text en Copyright © 2020, Ivanov et al. https://creativecommons.org/licenses/by/4.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0). Please note that the reuse, redistribution and reproduction in particular requires that the authors and source are credited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms)
spellingShingle Full Research Paper
Ivanov, Boris I
Volkhin, Dmitri I
Novikov, Ilya L
Pitsun, Dmitri K
Moskalev, Dmitri O
Rodionov, Ilya A
Il’ichev, Evgeni
Vostretsov, Aleksey G
A wideband cryogenic microwave low-noise amplifier
title A wideband cryogenic microwave low-noise amplifier
title_full A wideband cryogenic microwave low-noise amplifier
title_fullStr A wideband cryogenic microwave low-noise amplifier
title_full_unstemmed A wideband cryogenic microwave low-noise amplifier
title_short A wideband cryogenic microwave low-noise amplifier
title_sort wideband cryogenic microwave low-noise amplifier
topic Full Research Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7537378/
https://www.ncbi.nlm.nih.gov/pubmed/33083196
http://dx.doi.org/10.3762/bjnano.11.131
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