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Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias
Bottom-up Cu deposition in metallized through silicon vias (TSV) depends on a co-adsorbed polyether–Cl(−) suppressor layer that selectively breaks down within recessed surface features. This work explores Cu deposition when formation of the suppressor blocking layer is limited by the flux of Cl(−)....
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7537470/ https://www.ncbi.nlm.nih.gov/pubmed/33029031 |