Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain g...

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Detalles Bibliográficos
Autores principales: Liu, Houfang, Lu, Tianqi, Li, Yuxing, Ju, Zhenyi, Zhao, Ruiting, Li, Jingzhou, Shao, Minghao, Zhang, Hainan, Liang, Renrong, Wang, Xiao Renshaw, Guo, Rui, Chen, Jingsheng, Yang, Yi, Ren, Tian‐Ling
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2020
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7539221/
https://www.ncbi.nlm.nih.gov/pubmed/33042746
http://dx.doi.org/10.1002/advs.202001266

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7539221/
https://www.ncbi.nlm.nih.gov/pubmed/33042746
http://dx.doi.org/10.1002/advs.202001266

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